Communication Management Machine- Fornitore global

Building F4, China Internet of Things International Innovation Park, No. 200, Linghu Avenue, Xinwu District, Wuxi, Jiangsu

Karakteristika Produk: Sensor juëc, kaam juëc

Support isolation device

Integrated Collection Transmission (Kɔl-kɔl-kɔl-kɔl-kɔl-kɔl-kɔl-kɔl-kɔl-kɔl-kɔl-kɔl-kɔl)

Support breakpoint renewal, automatic replenishment

MBUS/103/104 wɛ̈ɛ̈r

Lɔ̈ɔ̈m ë gël ë wɛ̈t ë wɛ̈t ë wɛ̈t ë wɛ̈t ë wɛ̈t ë wɛ̈t ë wɛ̈t

Parameters teknis

Parameters wɛɛngɛ
Temperature de luɔi	-25~+55℃	& emsp;
Temperature ye tɔ̈ɔ̈u	-40~+70℃	& emsp;
Rɛlatif humidity	5%~95% (cïn kë ye cɔl condensing)	& emsp;
Height (luɔi)	2000m (6,560 ft)	& emsp;
Lɔ̈ɔ̈i (tɔ̈ɔ̈u)	10000m (32,810 ft)	& emsp;
Impact (luɔi)	5g/11ms, half sine	& emsp;
Kɔɔr (Storage)	15g/11ms, half sine	& emsp;
Vibration (luɔi)	1.5mm@2 ~ 9Hz; 0.5g@10 ~ 500Hz	& emsp;
Vibration (tɔ̈ɔ̈u)	3.5mm@2 ~ 9Hz; 1g@10 ~ 500Hz	& emsp;
EMCParameters
Proyek	Standart	Indikator
Power port conduction harassment	GB 9254 ye－2008	AKlas
Telecom port transmission harassment	GB/T 17626.2-2006	Kontak:±8KV
Radiation harassment (Radiation harassment) (Radiation harassment)1GHzdɔɔr)		Air:±15KV
Electrostatic discharge resistance		& emsp;
Radiation field electromagnetic interference (Radiation field electromagnetic interference) (Radiation field electromagnetic interference) (Radiation field electromagnetic interference) (Radiation field electromagnetic interference) (Radiation field electromagnetic interference)	GB/T 17626.3-2006	10V/m
Electrical fast transient pulse group resistance	GB/T 17626.4-2006	± 4KV@5K / 100KHz
Kɔl ye kɔl ye kɔl ye kɔl ye kɔl ye kɔl ye kɔl ye kɔl ye kɔl ye kɔl ye kɔl ye kɔl ye kɔl ye kɔl ye kɔl	GB/T 17626.5-2006	Wave form:1.2/50us
		通信端口：
		Modɛl:±2KV
		Difference model:±1KV
		Power & Open-up/Port ye looi:
		Modɛl:±4KV
		Difference model:±2KV
Radiofrequency Field Sensing's Conductive Harassment Resistance	GB/T 17626.6-2006	10V
Magnetic field resistance	GB/T 17626.8-2006	30A/m(Dɔɔr)
Magnetic field resistance	GB/T 17626.8-2006	300A/m（1~3s）
Pulse magnetic field resistance (Pulse magnetic field resistance)	GB/T 17626.9-2006	300A/m
Voltage suspension, short-term interruption, and voltage change resistance. Voltage suspension, short-term interruption, and voltage change resistance. Voltage suspension, short-term interruption, and voltage change resistance. Voltage suspension, short-term interruption, and voltage change resistance.	GB/T 17626.11-2006	500ms